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| 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3667 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 7.5 30 45 189 7.5 4.5 150 -55~150 A W mJ A mJ C C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2006-11-08 2SK3667 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Switching time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 7.5 A - Duty < 1%, tw = 10 s = 10 V VGS 0V 50 ID = 4 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG =10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min 30 600 2.0 1.5 Typ. 0.75 5.5 1300 12 120 20 50 35 150 33 18 15 Max 10 100 4.0 1.0 pF Unit A V A V V S ns RL = 50 VDD 200 V - nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 7.5 A, VGS = 0 V IDR = 7.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 12 Max 7.5 30 -1.7 Unit A A V ns C Marking K3667 Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3667 ID - VDS 10 10,8 6 5.5 COMMON SOURCE Tc = 25C PULSE TEST 20 ID - VDS 10 8 COMMON SOURCE Tc = 25C PULSE TEST 6 12 5.5 8 5.25 5 4 4.75 4.5 0 0 VGS = 4 V 10 20 30 40 50 (A) (A) 20 8 16 DRAIN CURRENT ID 5.25 6 5 4 4.75 2 4.5 VGS = 4V 0 0 4 8 12 16 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS COMMON SOURCE VDS - VGS VDS (V) 10 20 (A) 16 VDS = 20 V PULSE TEST 8 ID = 10 A 6 COMMON SOURCE Tc = 25 PULSE TEST 4 5 2 2.5 0 0 DRAIN CURRENT ID 12 8 Tc = -55C 4 100 25 0 0 DRAIN-SOURCE VOLTAGE 2 4 6 8 10 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S) 100 10 RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE Tc = 25C PULSE TEST 10 Tc = -55C 25 1 100 1 VGS = 10 V15V COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3667 RDS (ON) - Tc 4 100 COMMON SOURCE PULSE TEST IDR - VDS COMMON SOURCE Tc = 25C PULSE TEST 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 3 2 4 ID = 7.5A DRAIN REVERSE CURRENT IDR (A) VGS = 10 V 1 10 5 3 1 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2 1 2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - VDS 10000 5 Vth - Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) Ciss 1000 4 C CAPACITANCE Coss 100 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C Crss 1 0.1 1 10 100 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc VDS (V) 60 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS 20 DRAIN POWER DISSIPATION PD (W) 400 VDS VDD = 100 V 16 40 DRAIN-SOURCE VOLTAGE 300 200 200 VGS 400 COMMON SOURCE 100 ID = 7.5 A Tc = 25C PULSE TEST 0 0 10 20 30 40 12 8 20 4 0 0 40 80 120 160 200 0 50 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-08 2SK3667 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T Rth (ch-c) = 2.78C/W 0.01 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 400 EAS - Tch AVALANCHE ENERGY EAS (mJ) 100 s * 300 (A) 10 ID max (CONTINUOUS) * 1 ms * DRAIN CURRENT ID 200 1 DC OPERATION Tc = 25C 100 SINGLE NONREPETITIVE PULSE 0.1 CURVES LINEARLY Tc=25 MUST WITH BE DERATED IN 0 25 50 75 100 125 150 INCREASE CHANNEL TEMPERATURE (INITIAL) Tch (C) VDSS max TEMPERATURE. 0.01 1 10 100 1000 15 V -15 V BVDSS IAR VDD VDS DRAIN-SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 VDD = 90 V, L = 5.88mH WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-08 2SK3667 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08 |
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